Semiconductor component having a passivation layer and method for manufacturing same
AssigneesEupec Europaelsche Gesellsch. F. Leistungshalbleiter MBH & Co.KG, Siemens Aktiengesellschaft
InventorsAlbert Hammerschmidt, Gerhard Schmidt, Rolf Schulte
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Abstract
A semiconductor component has a semiconductor body with at least on pn-junction therein, extending to the surface of the semiconductor body, and has a passivation layer composed of boron-doped, amorphous, hydrogenous carbon (A-C:H) which covers at least the portion of the pn-junction extending to the surface, the boron content of the passivation layer being between 0.1 per mil and 4% by weight. The passivation layer is manufactured on the semiconductor body by deposition from a high-frequency, low-pressure plasma which is generated in a mixture of gaseous, organic compounds containing carbon and hydrogen and gaseous, organic boron compounds.
Claims4
A semiconductor component comprising a semiconductor body having an n-region and a p-region forming at least one pn-junction therein extending to a surface of said semiconductor body, and a layer for electroactively passivating said surface of said semiconductor body, said layer electrically coupled to and covering at least a part of said pn-junction extending to said surface and composed of boron-doped, amorphous, hydrogenous carbon with a boron content in a range of from 0.01 per mil to 4% by weight and giving said layer a conductivity matched to a conductivity of said p-region.
Dependencies are inferred from the claim text.