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US 5,631,189 AGranted
Method of forming element isolation region
AssigneeNippon Telegraph and Telephone Corporation
InventorsToshio Kobayashi, Satoshi Nakayama
Life of this patent
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Abstract
According to this method, before a silicon nitride (Si.sub.3 N.sub.4) layer having a thickness of about 200 nm and serving as a field oxidation (selective oxidation) mask is formed, nitrogen-doped amorphous silicon is deposited to form a silicon layer having a thickness of about 50 nm and serving as an underlying layer of the silicon nitride layer.
Claims20
A method of forming an element isolation region, comprising the steps of:
- forming an oxide film on a semiconductor substrate;
- forming a silicon buffer layer consisting of silicon doped with an impurity which prevents crystallization of silicon and suppresses oxidation of silicon;
- forming an oxidation-resistant film on said buffer layer;
- selectively removing part of the oxidation-resistant film to form a mask for oxidation consisting of the oxidation-resistant film;
- and
- forming an element isolation region by oxidizing a portion of said buffer layer and a portion of said semiconductor substrate.
3 more elements
A method of forming an element isolation region, comprising:
- forming an oxide film on a semiconductor substrate;
- forming a silicon buffer layer of silicon doped with an impurity that inhibits the growth of crystal grains and promotes oxidation of said buffer layer on said oxide film;
- forming an oxidation-resistant film on said buffer layer;
- selectively removing part of the oxidation-resistant film to form a mask for oxidation consisting of the oxidation-resistant film;
- and
- forming an element isolation region by oxidizing a portion of said buffer layer and a portion of said semiconductor substrate.
3 more elements
Dependencies are inferred from the claim text.