Exposure mask comprising transparent and translucent phase shift patterns

An exposure mask characterized in that the exposure mask is formed by providing a mask pattern comprising a transparent phase shift pattern and a translucent phase shift pattern on a light-transmissive substrate,

• said transparent phase shift pattern and said translucent phase shift pattern cause a phase difference of 180.degree. to exposure light passing through said transparent phase shift pattern relative to exposure light passing through said light-transmissive substrate and said translucent phase shift pattern,
• at least one opening portion in the mask pattern having at an adjacent region an overlap region of said transparent phase shift pattern and said translucent phase shift pattern, and
• at least one unit region comprising first and second regions on the outside of said overlap region, the first region being a region of said translucent phase shift pattern and the second region being a region where said transparent phase shift pattern overlaps said translucent phase shift pattern.

An exposure method for subjecting an object to be processed to an exposure process by using an exposure mask formed by providing a mask pattern comprising a transparent phase shift pattern and a translucent phase shift pattern on a light-transmissive substrate,

• said transparent phase shift pattern and said translucent phase shift pattern of said exposure mask cause a phase difference of 180.degree. to exposure light passing through said transparent phase shift pattern relative to exposure light passing through said light transmissive substrate and said translucent phase shift pattern,
• at least one opening portion in the mask pattern having at an adjacent region an overlap region of said transparent phase shift pattern and said translucent phase shift pattern, and a region of said translucent phase shift pattern provided on the outside of said overlap region.

An exposure method for subjecting an object to be processed to an exposure process, by using an exposure mask formed by providing a mask pattern comprising a transparent phase shift pattern and a translucent phase shift pattern on a light-transmissive substrate,

• said transparent phase shift pattern and said translucent phase shift pattern of said exposure mask cause a phase difference of 180.degree. to exposure light passing through said transparent phase shift pattern and said translucent phase shift pattern,
• at least one opening portion in the mask pattern having at an adjacent region an overlap region of said transparent phase shift pattern and said translucent phase shift pattern, and
• at least one unit region comprising first and second regions on the outside of said overlap region, the first region being a region of said translucent phase shift pattern and the second region being a region where said transparent phase shift pattern overlaps said translucent phase shift pattern.