Semiconductor diode integrated with bipolar/CMOS/DMOS technology
AssigneeSGS-Thomson Microelectronics S.A.
InventorsPaola Galbiati, Ubaldo Mastromatteo
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Abstract
A diode integrated on semiconductor material with BCD technology and of the type provided on a substrate having a first type of conductivity inside an isolation region having a second type of conductivity. The diode comprises also a buried anode region having a first type of conductivity and a cathode region having a second type of conductivity. The cathode region comprises an epitaxial layer located above the buried anode region and a highly doped region provided inside the epitaxial layer. The buried anode region comprises depressions opposite which is located the highly doped region with the depressions being achieved by the intersection of lateral diffusions of distinct and adjacent portions of the buried anode region.
Claims28
An integrated circuit diode structure having monolithic semiconductor surface portions at a first surface thereof;
- first diffusions of a first conductivity type at said first surface;
- second diffusions
- which have a second conductivity type,
- which are removed from said first surface, and
- which have a profile characteristic of updiffusion from multiple laterally separated diffusion sources;
- said first and second diffusions being laterally misaligned;
- and
- said first and second diffusions being separated by a portion of said monolithic semiconductor surface portion which is more lightly doped than both said first and second diffusions.
An integrated circuit diode structure having monolithic semiconductor surface portions at a first surface thereof;
- first diffusions of a first conductivity type at said first surface;
- second diffusions
- which have a second conductivity type,
- which are removed from said first surface, and
- which have a profile characteristic of outdiffusion from multiple laterally separated diffusion sources;
- and
- said first diffusions corresponding to outdiffusion from first respective diffusion sources, and said second diffusions corresponding to outdiffusion from second respective diffusion sources, and wherein said first diffusion sources do not overlie said second diffusion sources;
- and
- said first and second diffusions being separated by a portion of said monolithic semiconductor surface portion which is more lightly doped than both said first and second diffusions.
An integrated circuit diode structure having monolithic semiconductor surface portions at a first surface thereof;
- first diffusions of a first conductivity type at said first surface;
- second diffusions
- which have a second conductivity type,
- which are removed from said first surface, and
- which have a profile characteristic of outdiffusion from multiple laterally separated diffusion sources;
- and
- third diffusions underlying and laterally surrounding said first and second diffusions;
- said first and second diffusions each including multiple elongated stripes, and being mutually interdigitated in a pattern which provides lateral offset between said first and second diffusions;
- and
- said first and second diffusions being separated by a portion of said monolithic semiconductor surface portion which is more lightly doped than both said first and second diffusions.
A diode integrated on a semiconductor material with BCD technology of the type provided on a substrate having a first type of conductivity inside an isolation region having a second type of conductivity and comprising a buried anode region having a first type of conductivity and a cathode region having a second type of conductivity and said cathode region comprising an epitaxial layer located above said buried anode region and a highly doped region provided inside said epitaxial layer wherein said highly doped region is located opposite depressions in said buried anode region.
Dependencies are inferred from the claim text.