US 5,629,554 AGranted

Semiconductor device with a bipolar transistor formed in a layer of semiconductor material provided on an insulating substrate

AssigneeU.S. Philips Corporation

InventorsHenricus G. R. Maas, Ronald Dekker, Armand Pruijmboom

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Abstract

A semiconductor device with a bipolar transistor formed in a layer of semiconductor material (2) provided on an insulating substrate (1), in which material a collector zone (4), a base zone (5), and an emitter zone (6) are provided below a strip of insulating material (3) situated on the layer (2), which zones are connected to contact regions (7, 8, 9, 10) lying adjacent the strip (3), three of the contact regions (8, 9, 10) lying next to one another at a same side of the strip (3), of which two (8 and 9) are connected to the base zone (5) while the third (10), which lies between the former two (8 and 9), is connected to the emitter zone (6). The three contact regions (8, 9, 10) situated next to another at the same side of the strip (3) are provided alternately in the layer of semiconductor material (2) and in a further layer of semiconductor material (19) extending up to the strip (3). The three contact regions (8, 9, 10) connected to the base zone (5) and the emitter zone (6) may be provided with mutual interspacings which are smaller than the details which can be realised in a photoresist layer by means of the photolithographic process to be used in the manufacture of the transistor. As a result, the transistor can be manufactured with a very small extrinsic base.

Claims10

Dependent claims

In a semiconductor device having a bipolar transistor formed in a layer of semiconductor material on an insulating substrate, said bipolar transistor having a collector zone, a base zone and an emitter zone disposed in said layer of semiconductor material, said semiconductor device also having a strip of insulating material disposed on said layer above said collector zone, said base zone and said emitter zone, and contact regions adjacent to one another at one side of said strip, two of said contact regions being connected to said base zone and a third of said contact regions being disposed between said two contact regions and being connected to said emitter zone, the improvement comprising:

a further layer of semiconductor material different from said layer of semiconductor material, said further layer of semiconductor material being disposed on said insulative substrate, butting said layer of semiconductor material at said one side of said strip of insulating material, and further extending over a portion of said strip of insulating material at said one side, (i) one of either said third contact region or said two contact regions being disposed in said layer of semiconductor material and (ii) the other one of either said contact region or said two contact regions being disposed in said further layer of semiconductor material and being comprised of either a strip-shaped region or strip-shaped regions, respectively.

Dependencies are inferred from the claim text.