US 5,629,548 AGranted

Semiconductor device with adjustable channel width

AssigneeKabushiki Kaisha Toshiba

InventorsTutomu Tamaki, Kiyomi Naruke

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Abstract

A semiconductor device having N-type source and drain regions formed substantially in parallel to each other in the surface of a P-type semiconductor substrate. A channel region having first to fourth edges are sandwiched between each pair of the source and drain regions on the first and second edges. A gate insulating film is formed on the semiconductor substrate. Gate electrodes are formed substantially in parallel to each other on the semiconductor substrate via gate insulating film so as to cross the source and drain regions. The first and second edges of the channel regions are substantially parallel to the source and drain regions, and third and fourth regions are substantially parallel to the gate electrodes. A P-type impurity diffusion region is formed by ion implantation in accordance with self-alignment with gate electrode, at least on either of the third or fourth edge of at least one of the channel regions. An impurity concentration of the impurity diffusion region is adjusted such that it is higher than that of the semiconductor substrate.

A semiconductor device comprising:

a semiconductor substrate;
a plurality of first conductivity type source regions substantially in parallel to each other in a surface of said semiconductor substrate and including two end source regions separated by plural intermediate source regions;
a plurality of first conductivity type drain regions substantially in parallel to each other in the surface of said semiconductor substrate and including two end drain regions separated by plural intermediate drain regions, said substrate being of second conductivity type opposite to said first conductivity type;
a gate insulating film on a portion of the surface of said semiconductor substrate between said plurality of source regions and said plurality of drain regions;
a plurality of gate electrodes on said gate insulating film between said plurality of source and said plurality of drain regions and respectively covering a plurality of channel regions beneath said gate insulating film;
at least one second conductivity type impurity diffusion region in the surface of the semiconductor substrate at least on one side of at least a first one of said channel regions of a first effective channel width extending between one of said intermediate source regions and one of said intermediate drain regions, the impurity concentration of said at least one second conductivity type impurity diffusion region being higher than the impurity concentration of said semiconductor substrate;
and
at least a second one of said channel regions between one of said end source regions and one of said end drain regions having a second effective channel width sufficiently wider than said first effective channel width such that the effective threshold for a semiconductor component including said one end source region and said one end drain region is measurably higher than the effective threshold for a semiconductor component including said one intermediate source region and said one intermediate drain region.

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Abstract

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