Semiconductor device having overlapped storage electrodes

A semiconductor device comprising:

• a semiconductor substrate;
• a word line on the substrate;
• a first impurity region and odd and even second impurity regions at opposite sides of the word line in the substrate;
• a bit line connected to the first impurity region;
• a first contact hole to the odd second impurity region;
• a first storage electrode connected to the odd second impurity region through the first contact hole and formed over the odd and even second impurity regions;
• a second contact hole to the even second impurity region through the first storage electrode, the second contact hole having an insulating sidewall;
• a second storage electrode connected to the even second impurity region through the second contact hole, the second storage electrode overlapping the first storage electrode.

A semiconductor device comprising:

• a semiconductor substrate;
• a word line on the substrate;
• impurity regions at opposite sides of the word line in the substrate, including adjacent odd and even impurity regions;
• a first contact hole to the odd impurity region;
• a first storage electrode connected to the odd impurity region through the first contact hole, wherein the first storage electrode is formed over the odd and even impurity regions
• a first sidewall storage electrode at opposite sides of and coupled to the first storage electrode;
• a second contact hole to the even impurity region through the first capacitor storage electrode, the second contact hole having an insulating sidewall;
• a second storage electrode connected to the even impurity region through the second contact hole, wherein the second storage electrode overlaps the first storage electrode connected to the odd impurity region;
• and
• a second sidewall storage electrode at opposite sides of and coupled to the second storage electrode.