Method and apparatus for SOI transistor
AssigneeSony Corporation
InventorsHiroyuki Miwa, Takayuki Gomi, Katsuyuki Kato
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Abstract
A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.
Claims13
A method of manufacturing an SOI substrate having a crystalline silicon layer comprising:
- providing a semiconductor substrate;
- and
- ion implanting oxygen in a portion of said semiconductor substrate;
- and
- subsequent to said step of ion implanting, annealing said portion by irradiating said portion with an excimer laser beam;
- whereby an oxide layer and said crystalline silicon layer are formed on a surface of said semiconductor substrate.
A method of manufacturing an SOI substrate comprising:
- (a) providing a semiconductor substrate;
- (b) ion implanting oxygen in a portion of said semiconductor substrate;
- (c) subsequent to said step of ion implanting, annealing said portion by irradiating said portion with an excimer laser beam, thereby forming an insulating film on said semiconductor substrate;
- (d) forming a first crystalline silicon film over said insulating film;
- (e) epitaxially growing a silicon layer over said first crystalline silicon film;
- and
- (f) forming at least one addition layer of crystalline silicon film by ion implanting said silicon layer formed over said first crystalline silicon film and repeating said steps (c) and (d).
Dependencies are inferred from the claim text.