Method for manufacturing microcrystalline cubic boron-nitride-layers

A method for manufacturing microcrystalline cubic boron nitride layers comprising the steps of using a chemical vapor deposition in an electromagnetic alternating field using a temperature of from approximately 200.degree. to about 450.degree. C. and using a starting material selected from the group consisting of:

• adducts of borane to ammonia:
• adducts of borane to amines;
• adducts of alkyl boranes to ammonia adducts of organylboranes to amines;
• adducts of halogen borane to amines or ammonia;
• adducts of alkylhalogenboranes to amines or ammonia;
• adducts of boron halogenides organylboron halogenides and hydrogen boron halogenides to pyridine derivatives:
• adducts of boron halogenides organylboron halogenides and hydrogen boron halogenides to nitriles;
• (organyl-) amino-(organyl-) boranes;
• (organyl-) amino-(organyl-) halogenboranes;
• borozines;
• borozine derivatives;
• B.sub.3 N.sub.3 R.sub.6 wherein R is selected from the group consisting of H and NH.sub.2 ;
• B-halogenborazines;
• B-triorganylborazines;
• N-triorganylborazines;
• B,N-hexaorganyl derivates;
• B.sub.2 N.sub.2 R.sub.6 wherein R is selected from the group consisting of H, F, Cl, Alkyl, Aryl, and NH.sub.2 ;
• 1,2,3,4-tetraorganyl-1,3-diaza-2,4-diboracyclobutane;
• 1,2,3,4,5,6,7,8-octaorganyl-1,3,5,7-tetraaza-2,3,6,8-tetraboracyclooctane;
• 1,3,5,7-tetraorganyl-2,4,6,8-tetrahalogen-1,3,5,7-tetraaza-2,4,6,8-tetrabo racyclooctane;
• 2,3,4,6,7,8-hexaorganyl-1,3,5,7-tetraaza-2,4,6,8-tetraborobi-cyclo(3,3,0)o ctane;
• 1,2,-diorganyl-1, 2-azaborolanes;
• 1,2-diorganyl-1,2,azaborinanes;
• 1-bora-5-azabicyclo(3,3,0) octane;
• 1-bora-6-azabicyclo(4,4,0)decane;
• diaminoboranes;
• triaminoboranes;
• B-aminoborazines;
• and B.sub.3 N.sub.3 H.sub.6 R.sub.6 wherein R is selected from the group consisting of H, Alkyl, Aryl, and NH.sub.2.