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US 5,628,824 AGranted
High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition
AssigneeUniversity of Alabama at Birmingham Research Foundation
InventorsYogesh K. Vohra, Thomas S. McCauley
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Abstract
The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.
Claims33
A method for the deposition of diamond films onto a substrate comprising:
- providing a diamond forming gas adjacent to a substrate in a sealed chamber,
- exposing the gas to microwave radiation to generate a plasma from the diamond forming gas that encompasses the substrate under conditions such that the diamond film forms on the substrate, wherein the temperature of the substrate is greater than about 1600.degree. C.
A method for the deposition of diamond film onto a substrate comprising:
- providing a diamond forming gas containing methane and hydrogen adjacent to a diamond substrate in a sealed chamber;
- exposing the gas to microwave radiation to generate a plasma that encompasses the diamond substrate having a temperature in the range from about 2200.degree. C. to about 2500.degree. C. under conditions such that the diamond film forms on the surface of the diamond substrate.
A method for the production of monocrystalline diamond, comprising:
- providing a diamond forming gas adjacent to a diamond substrate in a sealed chamber;
- exposing the gas to microwave radiation to generate a plasma that encompasses the diamond anvil substrate, the substrate having a tip extending into the plasma, under conditions such that the monocrystalline diamond forms on the tip of the substrate.
Dependencies are inferred from the claim text.