Method to improve interlevel dielectric planarization using SOG
AssigneeSGS-Thomson Microelectronics S.A.
InventorsFrank R. Bryant, Charles R. Spinner, III
Life of this patent
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Abstract
A method is provided for forming a substantially planarized surface of an integrated circuit, and an integrated circuit formed according to the same. A conductive area is formed over a portion of a dielectric region. A first spin-on-glass layer is formed over the conductive area and exposed dielectric region. A second spin-on-glass layer is formed over the first spin-on-glass layer; wherein the second spin-on-glass layer has a slower etch rate than the first spin-on-glass layer. A partial etchback of the first and second spin-on-glass layers is performed forming a substantially planar surface.
Claims17
A method of forming a planarized semiconductor integrated circuit, comprising the steps of:
- forming a conductive area over a dielectric region;
- etching portions of the conductive area to form a plurality of conductive regions exposing a portion of the dielectric region;
- forming a conformal dielectric layer over the conductive regions and exposed dielectric region;
- forming a first spin-on-glass layer over the conformal dielectric layer;
- forming a second spin-on-glass layer over the first spin-on-glass layer;
- wherein the second spin-on-glass layer has a slower etch rate than the first spin-on-glass layer;
- and
- performing a partial etchback of the first and second spin-on-glass layers wherein a portion of the conformal dielectric layer is exposed, forming a planar surface.
A method of forming a planarized semiconductor integrated circuit, comprising the steps of:
- forming a conductive area over a portion of a dielectric region, leaving an exposed dielectric region;
- forming a first spin-on-glass layer over the conductive area and exposed dielectric region;
- forming a second spin-on-glass layer over the first spin-on-glass layer;
- wherein the second spin-on-glass layer has a slower etch rate than the first spin-on-glass layer;
- and
- performing a partial etchback of the first and second spin-on-glass layers forming a planar surface.
Dependencies are inferred from the claim text.