Method of thin film transistor formation with split polysilicon deposition

Abstract

An interconnect between a conductor and a transistor body above a gate electrode is established by forming a conductor separated and alongside a gate electrode. Both the conductor and the gate electrode are coated with a dielectric material such as silicon dioxide. The silicon dioxide layer is subsequently coated with a thin layer of polysilicon and a contact hole is photolithographically etched through the polysilicon layer and through the silicon dioxide layer to establish a contact hole to said conductor. The polysilicon layer protects the silicon dioxide layer from impurities in the photolithography process. After the photolithographic mask is removed, a second layer of polysilicon is deposited on the first layer of polysilicon, coating the polysilicon layer and partially filling the contact hole, establishing a contact between the combined polysilicon layers and the conductor. The combined polysilicon layer is then further etched to define the transistor body and the connector between the conductor and the transistor body. The channel, the source and drain electrodes, and the connection lines are then doped separately to complete the transistor. This is paticularly useful when a first transistor source or drain is connected to a second, adjacent, transistor gate electrode.

Dependencies are inferred from the claim text.