Method for hydrogenating a polycrystal silicon layer of a thin film transistor

Abstract

The present invention improves a current--voltage characteristic by perfectly eliminating defects in the polycrystal silicon layer of TFT by hydrogenation. In the first process, hydrogen is doped into the polycrystal silicon layer 16 of TFT 1 by the hydrogen plasma doping method to eliminate a greater part of the defects in the polycrystal silicon layer 16. Thereafter, in the second process, after an amorphous silicon nitride film 23 including hydrogen is formed on the polycrystal silicon layer 16 or on the stopper layer 17 provided on the polycrystal silicon layer 16, hydrogen is released from the amorphous silicon nitride film 23 including hydrogen by the annealing process and such released hydrogen is then diffused into the polycrystal silicon layer 16 in order to eliminate remaining defects in the polycrystal silicon layer 16.

Dependencies are inferred from the claim text.