Structure and method for exposing photoresist
AssigneeAdvanced Micro Devices, Inc.
InventorsShekhar Pramanick, Scott Luning, Jonathon Fewkes
Life of this patent
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Abstract
A structure for patterning a polysilicon layer includes a TiN layer located above an amorphous silicon (a-Si) layer forming a TiN/a-Si stack. The TiN/a-Si stack is located above the polysilicon layer. The TiN layer serves as an ARC to reduce overexposure of the photoresist used to pattern the polysilicon layer, while the a-Si layer prevents contamination of the layer below the polysilicon layer.
Claims11
A structure for reducing light reflection in patterning a polysilicon layer, said structure comprising:
- a polysilicon layer;
- a first layer above said polysilicon layer;
- and
- a second layer above said first layer, said second layer reflecting less light than said polysilicon layer would reflect,
- wherein substantially no particles from said second layer diffuse through said first layer during subsequent processing in patterning said polysilicon layer.
A structure for uniformly patterning a polysilicon layer and preventing contaminating particulates from reaching the polysilicon layer comprising:
- a polysilicon layer;
- a first, contamination prevention layer, formed over the polysilicon layer;
- and
- a second, antireflection coating, layer formed over said first layer.
Dependencies are inferred from the claim text.