Method of forming oxide film

An oxide film forming method comprising the steps of:

• supplying a reactant gas into a plasma chemical vapor deposition (CVD) apparatus in which a wafer is disposed and applying a plasma generating voltage to form a first silicon oxide film on said wafer;
• performing a first hydrophobic rendering process on the first silicon oxide film comprising the steps of:
• stopping the supply of said reactant gas into said plasma CVD apparatus;
• stopping the application of said plasma generating voltage;
• introducing tetraethylorthosilicate (TEOS) gas into said plasma CVD apparatus to establish an atmosphere of said TEOS gas in a process chamber of said plasma CVD apparatus, and allowing the first silicon oxide film on said wafer to react with said TEOS gas in said process chamber for a predetermined time to allow a condensation reaction between Si--OH on a surface of the first silicon oxide film, and said TEOS gas to impart hydrophobic characteristics on the first silicon oxide film;
• reacting O.sub.3 with the TEOS gas to form a second oxide film on said first silicon oxide film after the first silicon oxide film has been rendered hydrophobic by the condensation reaction between the Si--OH on the surface of the first silicon oxide film and the TEOS gas;
• and wherein said reactant gas comprises SiH.sub.4 and N.sub.2 O.

An oxide film forming method comprising the steps of:

• supplying a reactant gas into a plasma CVD apparatus in which a wafer is stored and applying a plasma generating voltage to form a first plasma silicon oxide film on said wafer;
• performing a first hydrophobic rendering process comprising the steps of:
• stopping supply of said reactant gas into said plasma CVD apparatus and stopping application of said plasma generating voltage, introducing tetraethylorthosilicate TEOS gas into said plasma CVD apparatus to fill a process chamber of the plasma CVD apparatus with an atmosphere of said TEOS gas and allowing said plasma silicon oxide film on said wafer to react with said TEOS gas in said process chamber and to adsorb the TEOS gas;
• removing said wafer from said plasma CVD apparatus and disposing said wafer in a cassette;
• transporting said wafer disposed in said cassette to a second CVD apparatus;
• and
• allowing O.sub.3 to react with the TEOS gas in said second CVD apparatus to form a second oxide film on said first plasma silicon oxide film subjected to said first hydrophobic rendering process.

An oxide film forming method comprising the steps of:

• supplying a reactant gas into a plasma chemical vapor deposition (CVD) apparatus in which a wafer is stored and applying a plasma generating voltage to form a first plasma silicon oxide film on said wafer;
• performing a first hydrophobic rendering process comprising the steps of:
• stopping supply of said reactant gas into said plasma CVD apparatus and stopping application of said plasma generating voltage, introducing tetraethylorthosilicate (TEOS) gas into said plasma CVD apparatus to fill a process chamber of the plasma CVD apparatus with an atmosphere of said TEOS gas, and allowing said plasma silicon oxide film on said wafer to react with said TEOS gas in said process chamber and to adsorb the TEOS gas;
• removing said wafer from said plasma CVD apparatus and disposing said wafer in a cassette;
• transporting said wafer disposed in said cassette to a second CVD apparatus;
• allowing O.sub.3 to react with the TEOS gas in said second CVD apparatus to form a second oxide film on said first plasma silicon oxide film subjected to said first hydrophobic rendering process;
• and
• wherein process conditions for said first hydrophobic rendering process are set to a pressure of 9 Torr, a temperature of 370.degree. C. a flow rate of said TEOS gas of 250 sccm, and a time of 40 to 100 sec.

An oxide film forming method comprising the steps of:

• supplying a reactant gas comprised of a mixture of SiH.sub.4 and N.sub.2 O into a reaction chamber of a plasma chemical vapor deposition (CVD) apparatus in which a wafer is disposed;
• applying a plasma generating voltage to plasmatize the reagent gas and to chemically vapor-deposit a first silicon oxide film on said wafer;
• stopping both the supply of said reactant gas into said plasma CVD apparatus and the application of said plasma generating voltage to stop the deposition of the first silicon oxide film;
• introducing tetraethylorthosilicate (TEOS) gas into said plasma CVD apparatus to fill the process chamber in which the wafer is disposed, with the TEOS gas;
• allowing the first silicon oxide film on said wafer to react with said TEOS gas in said process chamber for a predetermined time sufficient to allow a condensation reaction between Si--OH on a surface of the first silicon oxide film, and said TEOS gas, and to impart predetermined hydrophobic characteristics on the first silicon oxide film;
• and
• reacting O.sub.3 with the TEOS gas to chemically vapor-deposit a second oxide film on said first silicon oxide film after the first silicon oxide film has been rendered hydrophobic by the condensation reaction between the Si--OH on the surface of the first silicon oxide film and the TEOS gas.

A method of rendering an oxide film hydrophobic in a manner which provides predetermined substrate dependency characteristics and facilitates a subsequent formation of a silicon oxide film, comprising the steps of:

• supplying a reactant gas comprised of a mixture of tetraethylorthosilicate (TEOS) gas and oxygen (O.sub.2) into a process chamber of a plasma chemical vapor deposition (CVD) apparatus in which a wafer is disposed, and applying a plasma generating voltage to chemically vapor-deposit a first silicon oxide film on the wafer;
• stopping the supply of the O.sub.2 gas into the plasma CVD apparatus and stopping the application of the plasma generating voltage to stop the deposition of the first silicon oxide film;
• continuing the supply of the TEOS gas into the plasma CVD apparatus to completely fill the process chamber in which the wafer is disposed, with the TEOS gas;
• allowing the TEOS gas to adsorb onto a surface of the first silicon oxide film and for the TEOS gas to react with the first silicon oxide film for a predetermined time sufficient to allow a condensation reaction between Si--OH on a surface of the first silicon oxide film, and the TEOS gas;
• exposing the wafer to moisture containing atmospheric air;
• hydrolyzing the TEOS gas adsorbed on the first silicon oxide film with the moisture contained in the atmospheric air to yield ethanol;
• and
• allowing the ethanol to react with the first silicon oxide film.