Method of manufacturing a perovskite thin film dielectric

A method of manufacturing a semiconductor device, comprising the step of forming a dielectric thin film on a semiconductor layer, said dielectric thin film being made of a compound represented by the general formula (1) given below:

• ABO.sub.3 ( 1)
• where "A" is at least one element selected from the group consisting of Ca, Ba, Sr, Pb and La, and "B" is at least one element selected from the group consisting of Zr and Ti,
• wherein said dielectric thin film is formed by a chemical vapor deposition carried out under the kinetically limited conditions in which a pressure is 400 Torr or less and a temperature is 1,000.degree. C. or less by using a raw material gas containing a .beta.-diketone complex compound of said element A, a .beta.-diketone complex compound of said element B, and an oxidizing agent;
• and
• wherein the supply amount of said .beta.-diketone complex compound of said element B is at least 5 times as much in molar ratio as the supply amount of said .beta.-diketone complex compound of said element A so as to form said dielectric thin film in which the element ratio A/A+B is substantially equal to stoichiometric ratio of 0.5.