Process gas inlet and distribution passages
AssigneeApplied Materials, Inc.
InventorPhilip M. Salzman
Life of this patent
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AssigneeApplied Materials, Inc.
InventorPhilip M. Salzman
Estimating the term…
An easy to modify, remove, clean, and replace gas distribution ring for a highly corrosive plasma etch substrate processing chamber is disclosed. Gas is provided to a gap between adjacent pieces in sealing a ceramic dome of the processing chamber to a lower wall section of processing chamber. The gap acts as a manifold type channel around the periphery of the processing chamber. The channel opening is obstructed by the gas distribution ring. The gas distribution ring includes a series of slots in its surface which control the gas flow pattern into the processing chamber. The gas flow pattern can be easily adjusted merely by changing one gas distribution ring to another gas distribution ring with the desired slot configuration. The gas flow passages can easily be cleaned by removing the process chamber dome which exposes the gas flow passages in the gas distribution ring.
A processing chamber gas distribution manifold comprising:
A processing chamber gas distribution system comprising:
A processing chamber gas distribution system comprising:
In an evacuable processing chamber having a dome for containing a substrate fabrication process and gas channels adapted to transmit process gas into the interior of the chamber, the improvement comprising:
Dependencies are inferred from the claim text.