Two-transistor zero-power electrically-alterable non-volatile latch

An array of two-transistor, zero-power, electrically-alterable non-volatile latch elements comprising:

• a row line for each row in said array;
• a column line for each column in said array, each column line forming an intersection with each row line in said array;
• a plurality of two-transistor, zero-power, electrically-alterable non-volatile latch elements arranged in array of rows and columns, each of said two-transistor, zero-power, electrically-alterable non-volatile latch elements disposed at one of said intersections and comprising an input node, an output node, an erase node, a P-Channel MOS transistor having a source connected to a source of a first electrical potential, a drain connected to said output node, a control gate connected to said input node, and a floating gate capacitively coupled to said control gate, an N-Channel MOS transistor having a source connected to a source of a second electrical potential lower than said first electrical potential, a drain connected to said output node, a control gate connected to said input node, and a floating gate capacitively coupled to said control gate and common to said floating gate of said P-Channel MOS transistor, said floating gates of said P-Channel MOS transistor and said N-Channel MOS transistor capacitively coupled to said erase node via a tunnel dielectric, and a select transistor, each of said select transistors having, a source, source connected to said input node, a drain connected to the one of said column lines associated with its intersection, and a gate connected to the one of said row lines associated with its intersection;
• common erase line connected to the erase node of each of said two-transistor, zero-power, electrically-alterable non-volatile latch element in said array;
• circuitry for selectively connecting each of said row lines to a voltage selected from ground and Vpp;
• and
• circuitry for selectively connecting each of said column lines to a voltage selected from ground and Vpp.