Method for the deposition and modification of thin films using a combination of vacuum arcs and plasma immersion ion implantation

A method for depositing a CN.sub.x film on a substrate, comprising the steps of:

• providing a vacuum chamber with a curved magnetic duct, said vacuum chamber including nitrogen gas;
• providing a substrate positioned within said vacuum chamber;
• providing a cathode positioned at an end of said curved magnetic duct, said cathode comprising a carbon-based material;
• igniting a cathodic arc, said cathodic arc operating in a continuous mode and forming a carbon ion flux, said nitrogen gas forming a plasma;
• passing said carbon ion flux through said curved magnetic duct and onto said substrate;
• implanting said carbon ion flux and nitrogen ions from said nitrogen plasma onto said substrate to form a CN.sub.x film thereon.

A method for depositing a CN.sub.x film on a substrate, comprising the steps of:

• providing a vacuum chamber with a curved magnetic duct, said vacuum chamber including nitrogen gas;
• providing a substrate positioned within said vacuum chamber;
• providing a cathode positioned at an end of said curved magnetic duct, said cathode comprising a carbon-based material;
• igniting a cathodic arc, said cathodic arc operating in a pulsing mode and forming a carbon ion flux;
• providing a nitrogen plasma;
• passing said carbon ion flux through said curved magnetic duct and onto said substrate;
• implanting said carbon ion flux and nitrogen ions from said nitrogen plasma onto said substrate to form a CN.sub.x film.