Apparatus and method for depositing a film

A plasma apparatus for forming a diamond-like carbon layer on a magnetic substance comprising:

• a central columnar electrode;
• an outer electrode around said central electrode in a coaxial relation such that a discharge space is formed therebetween;
• a dielectric member located between said central electrode and said outer electrode;
• means for introducing a reactive gas containing at least a carbon compound gas from one end of said discharge space;
• means for applying a high frequency voltage between said central electrode and said outer electrode to form a plasma of said reactive gas;
• means for flowing a shield gas to prevent said plasma from directly contacting an ambient air;
• a substrate located in the vicinity of another end of said discharge space so that a carbon coating is formed on said substrate from said plasma.

A plasma apparatus for forming a diamond-like carbon layer on a magnetic substance comprising:

• a first chamber for forming a magnetic substance on a substrate;
• a second chamber located adjacent to said first chamber for treating said magnetic substance with a plasma;
• a third chamber located adjacent to said second chamber for forming a carbon coating by plasma CVD on said magnetic substance;
• and
• a means for continuously moving the substrate from said first chamber to said third chamber via said second chamber,
• wherein said third chamber comprises:
• a purge gas nozzle;
• a reaction space which is kept substantially airtight during operation thereof by forming a purge gas flow intervening between said reaction space and atmosphere outside of said reaction space from said purge gas nozzle;
• and
• a power source for applying an electric field between an electrode and a substrate to be coated in order to make plasma ions in said reaction space attracted by said substrate.

A plasma apparatus for forming a diamond-like carbon layer on a magnetic substance comprising:

• a first chamber for forming a magnetic substance on a substrate;
• a second chamber located adjacent to said first chamber for treating said magnetic substance with a plasma;
• a third chamber located adjacent to said second chamber for forming a carbon coating by plasma CVD on said magnetic substance;
• a means for continuously moving the substrate from said first chamber to said third chamber via said second chamber;
• and
• at least one buffer chamber interposed between said first chamber and said second chamber and between said second chamber and said third chamber,
• wherein said third chamber comprises:
• a central columnar electrode;
• an outer electrode around said central electrode in a coaxial relation such that a discharge space is formed therebetween;
• a dielectric member located between said central electrode and said outer electrode;
• means for introducing a reactive gas containing at least a carbon compound gas from one of said discharge space;
• means for applying a high frequency voltage between said central electrode and said outer electrode to form a plasma of said reactive gas;
• and
• means for flowing a shield gas to prevent said plasma from directly contacting an ambient air.

A plasma processing apparatus comprising:

• a central columnar electrode;
• an outer electrode around said central electrode in a coaxial relation such that a discharge space is formed therebetween;
• a dielectric member located between said central electrode and said outer electrode;
• means for introducing a reactive gas to said discharge space;
• means for applying a high frequency voltage between said central electrode and said outer electrode to form a plasma of said reactive gas;
• means for flowing a shield gas to prevent said plasma from directly contacting an ambient air;
• a substrate located in the vicinity of an end of said discharge space so that said substrate is treated with said plasma.

An apparatus for depositing a film comprising:

• a purge gas nozzle;
• a reaction space which is substantially kept airtight during operation thereof by forming a purge gas flow intervening between said reaction space and atmosphere outside of said reaction space from said purge gas nozzle;
• a central electrode provided in said reaction space;
• a peripheral electrode provided around said central electrode;
• an insulator provided between said central electrode and said peripheral electrode;
• a power source for supplying to said reaction space an electromagnetic energy required to maintain discharge in said reaction space;
• and
• means for applying a magnetic field to said reaction space.

A plasma apparatus for forming a diamond-like carbon layer on a magnetic substance comprising:

• a central columnar electrode;
• an outer electrode around said central electrode in a coaxial relation such that a discharge space is formed therebetween;
• a dielectric member located between said central electrode and said outer electrode;
• means for introducing a reactive gas containing at least a carbon compound gas from one end of said discharge space;
• means for applying a high frequency voltage between said central electrode and said outer electrode to form a plasma of said reactive gas;
• means for flowing a shield gas to prevent said plasma from directly contacting an ambient air;
• a substrate located in the vicinity of another end of said discharge space so that a carbon coating is formed on said substrate from said plasma;
• and
• means for applying a magnetic field to said plasma.