Film formation apparatus and method for forming a film
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHideomi Koinuma, Masashi Kawasaki, Masatomo Sumiya
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Abstract
A process and apparatus for depositing a film as desired on the surface of a substrate yet at a low temperature, said process comprising introducing a product gas into a film deposition chamber having provided therein a substrate being mounted on a support, and depositing a film on the surface of said substrate by activating said product gas inside said film deposition chamber while applying ultrasonic oscillation to said substrate.
Claims20
A method for forming a film comprising the steps of:
- providing a substrate in a film formation space;
- introducing a reaction gas into said film formation space;
- activating said reaction gas in said film formation space;
- and
- depositing an amorphous silicon film on said substrate by plasma chemical vapor deposition,
- wherein said substrate is vibrated at an ultrasonic frequency during the deposition of said film with conditions of the vibration being adjusted to obtain characteristics for said film wherein said characteristics are a function of the vibration conditions.
The method of claim i wherein said frequency and/or an output of the vibration are controlled to control a quality of said film.
A method for forming a film comprising the steps of:
- providing a substrate in a film formation space;
- introducing a reaction gas into said film formation space;
- activating said reaction gas in said film formation space:
- and
- depositing an amorphous silicon film on said substrate by plasma chemical vapor deposition,
- wherein a surface acoustic wave is generated in said substrate during the deposition of said film with conditions of the generation of said surface acoustic wave being adjusted to obtain characteristics for said film wherein the characteristics are a function of the surface acoustic wave conditions.
A method for forming a film comprising the steps of:
- providing a substrate in a film formation space;
- introducing a reaction gas into said film formation space;
- activating said reaction gas in said film formation space;
- depositing an amorphous silicon film on said substrate by plasma chemical vapor deposition;
- vibrating said substrate at an ultrasonic frequency during the deposition of said film,
- wherein an amplitude of the vibration is varied with time.
Dependencies are inferred from the claim text.