Process for cleaning semiconductor devices
AssigneeGoldstar Electron Co., Ltd.
InventorsChang-Jae Lee, Hyeung-Tae Kim
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Abstract
The present invention provides a process for cleaning semiconductor devices which enables the contamination of copper to maintained under a level of about 10.sup.9 atoms/cm.sup.2 to meet the qualification of DRAMs of equal to or greater than 64M bits in capacity by means of supplying O.sub.3 to a solution, resulting in great reproducibility and reliability. According to the present invention, a mechanism for removing a copper impurity in a semiconductor device uses oxygen to form a cupric oxide, which forms a cupric fluoride, which is then removed from the solution.
Claims14
A process for cleaning semiconductor devices contaminated by Cu, comprising the steps of:
- immersing a semiconductor device in an HF solution;
- supplying O.sub.3 bubbles into the HF solution, wherein Cu is removed from the semiconductor device and converted to cupric fluoride precipitates;
- and
- flushing the cupric fluoride precipitates from the HF solution.
A process for removing copper ions in semiconductor devices, comprising the steps of:
- producing oxygen atoms ([O]) by bubbling O.sub.3 gas into an HF solution;
- forming CuO by combining the oxygen ([O]) and a cupric ion (Cu.sup.2+);
- forming cupric fluoride precipitates (CuF.sub.2) by combining oxygen in the CuO and fluorine (F) in the HF solution through ion-exchange;
- and
- flushing the cupric fluoride precipitates from the HF solution by means of de-ionized water.
A process for cleaning semiconductors contaminated by Cu, comprising supplying oxygen atoms by bubbling O.sub.3 gas into an HF-containing solution containing the semiconductors, wherein Cu is removed from the semiconductors by combining oxygen and Cu atoms to form CuO, forming Cu-containing precipitates, and flushing the Cu-containing precipitates from the HF-containing solution.
Dependencies are inferred from the claim text.