Method of fabricating a thin film transistor having vertical channel
AssigneeHyundai Electronics Industries Co., Ltd.
InventorHyoung C. Ha
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Abstract
A thin film transistor having a vertical channel provided according to the invention comprises a vertical channel 4B having a sideways angular U-shaped or "" -shaped cross-section; source and drain areas 5 formed respectively in two ends of the channel 4B, and a gate electrode 7 surrounding a gate insulating layer 6 formed on upper and outer sides of the channel except for the source and drain areas. Accordingly, the satisfactory channel length in less area can be obtained and the leakage current can be reduced when the transistor is in Off state.
Claims4
A method of making a thin film transistor having a vertical channel, comprising the steps of:
- forming an insulator with a predetermined thickness and width and having a rectangular cross-section on an insulating layer;
- depositing a conducting layer;
- after depositing the conducting layer, forming a spacer from the conducting layer surrounding outer sides of the insulator by etching anisotropically the conducting layer;
- forming a vertical channel having a sideways angular U-shaped cross-section by etching one side of the spacer so that one side of the insulator is exposed;
- forming a gate insulating layer on upper and outer sides of the vertical channel except for two ends of the vertical channel;
- forming a gate electrode surrounding the gate insulating layer;
- and
- forming source and drain areas in the two ends of the vertical channel by an ion implantation process.
A method of making a thin film transistor having a vertical channel, comprising the steps of:
- forming an insulator with a predetermined thickness and width and having a rectangular cross-section on an insulating layer;
- depositing a conducting layer;
- after depositing the conducting layer, forming a spacer from the conducting layer surrounding outer sides of the insulator by etching anisotropically the conducting layer;
- etching one side of the spacer so that one side of the insulator is exposed;
- forming a vertical channel having a sideways angular U-shaped cross-section by etching the exposed side of the insulator;
- forming a gate insulating layer on upper, inner and outer sides of the vertical channel except for two ends of the channel;
- forming a gate electrode surrounding the gate insulating layer;
- and
- forming source and drain areas in two ends of the vertical channel by an ion implantation process.
Dependencies are inferred from the claim text.