US 5,539,217 A · Silicon carbide thyristor

Abstract

The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate.

Claims18

Dependent claims

A thyristor capable of operating over a wide temperature range, said thyristor comprising:

a substrate formed of silicon carbide
an anode formed of silicon carbide and positioned to overlie said substrate;
a gate positioned to overlie said anode;
a drift region formed of silicon carbide and positioned between said anode and said gate having a thickness less than a comparable silicon thyristor and a doping level higher than a comparable silicon thyristor at a predetermined operating voltage for providing a thyristor having a wide temperature range;
a cathode formed of silicon carbide and positioned to overlie said gate;
and
ohmic contacts positioned on at least said gate and said cathode.

4 more elements

Dependencies are inferred from the claim text.

Silicon carbide thyristor

Life of this patent

Silicon carbide thyristor

Life of this patent

Abstract

Claims18