A semiconductor integrated circuit, comprising:
- a first circuit block comprising first and second field effect transistors (FETs) connected in series having a first supply voltage input and a first supply voltage return and a first signal input and a first signal output, the first signal input having connected thereto an input signal having a first frequency;
- a second circuit block comprising third and fourth FET transistors connected in series and having a second supply voltage input independent of the first supply voltage input and a second supply voltage return independent of the first supply voltage return, and a second signal input and second signal output, and said second signal input having an input signal of a second frequency connected thereto, said first and second frequencies differing from each other;
- a semiconductor substrate containing in common said first through fourth field effect transistors, said substrate being of a first conductivity type and containing first and second spaced apart well regions of a second conductivity type at a surface thereof, and an electrode connected to the substrate for application of a substrate potential for creation of a potential neutral region in the substrate between the first and second well regions;
- said first well region containing said first field effect transistor in a first additional well region of first conductivity type, and said second field effect transistor being positioned along side said first additional well region in said first well region of second conductivity type;
- said second well region of said second conductivity type containing said third field effect transistor in a second additional well region of first conductivity type, and said fourth field effect transistor being positioned along side said second additional well region in said second well region of second conductivity type;
- said first well region of second conductivity type being directly connected to said first supply voltage return and said second well region of second conductivity type being directly connected to said second supply voltage return so that the supply voltage returns of the first and second circuit blocks are isolated from each other and a potential fluctuation caused by the first signal input of the first frequency in the first well region does not effect operation of the second circuit block, and potential fluctuations caused by the second signal input of said second frequency in said second circuit block is isolated from the first circuit block;
- the first and second field effect transistors of the first circuit block being part of a timing generator of a CCD (charge coupled device) image sensor system, and said third and fourth field effect transistors being part of a sync signal generator of the same CCD image sensor system;
- and
- said timing generator providing vertical and horizontal transfer clock signals to a CCD image sensor of said system based on a sync signal supplied to said timing generator from said sync signal generator, said sync signal generator providing a timing signal to a signal processor receiving signals from said CCD image sensor, and said isolation of the first and second supply voltage returns preventing a beat (a wave form distortion) from developing in an output image of said signal processor.