Aligning method
AssigneeNikon Corporation
InventorShinji Mizutani
Life of this patent
Estimating the term…
Abstract
Three layer patterns are formed on a shot area, and wafer marks for X axis and wafer marks for Y axis are formed in each of the first to third layers. When a reticle pattern to be exposed has a certain relationship with the first and second layer patterns, an alignment reference coordinate value is determined on the basis of coordinate values of the wafer marks in the first and second layers. Alignment between a predetermined shot area and a reticle pattern is performed on the basis of the alignment reference coordinate value. The alignment reference coordinate value can be determined on the basis of an average value or a weighted mean value of the coordinate values of the wafer marks.
Claims8
An aligning method for performing alignment between a mask pattern and a predetermined exposure area on a substrate on which a plurality of layer patterns have been formed, when said mask pattern is projected onto said exposure area, comprising the steps of:
- selecting a first alignment mark formed on a first layer pattern and a second alignment mark formed on a second layer pattern which is different from said first layer pattern, among said plurality of layer patterns, each of said first and second alignment marks being in a plurality of slit-shaped patterns extending in a first direction and spaced apart from each other by a predetermined pitch in a second direction which is perpendicular to said first direction;
- determining coordinate values of said first alignment mark and said second alignment mark;
- determining an alignment reference coordinate value on the basis of the coordinate values of said first alignment mark and said second alignment mark;
- and
- effecting alignment between said predetermined exposure area and said mask pattern on the basis of said determined alignment reference coordinate value.
A method of exposing a plurality of exposure areas on a substrate by applying thereto an image of a pattern of a mask, while performing alignment between a mask pattern and a predetermined exposure area on said substrate on which a first layer pattern and a second layer pattern have been formed, when said mask pattern is projected onto said exposure area, comprising the steps of:
- (a) measuring coordinate values of a first alignment mark formed on said first layer pattern and a second alignment mark formed on said second layer pattern, each of said alignment marks being in a plurality of slit-shaped patterns extending in a first direction and spaced apart from each other by a predetermined pitch in a second direction which is perpendicular to said first direction;
- (b) determining a reference coordinate value for said predetermined exposure area on the basis of said first alignment mark and said second alignment mark;
- and
- (c) moving said mask and said substrate relative to each other on the basis of said reference coordinate value so that said area is exposed to the image of the pattern of the mask.
An aligning method for performing alignment between a mask pattern and a predetermined exposure area on a substrate on which a first layer pattern and a second layer pattern have been formed, when said mask pattern is projected onto said exposure area, comprising the steps of:
- (a) measuring coordinate values of a first alignment mark formed on said first layer pattern and a second alignment mark formed on said second layer pattern;
- (b) determining a reference coordinate value by using weighted mean of the coordinate values of said first and second alignment marks, in accordance with the degree of significance in the relationship between said first and second layer patterns and said mask pattern for said predetermined exposure area;
- and
- (c) moving said mask and said substrate relative to each other on the basis of said reference coordinate value so that said area is exposed to the image of the pattern of the mask.
Dependencies are inferred from the claim text.