Photo-assisted CVD apparatus
AssigneeKabushiki Kaisha Toshiba
InventorsYoshinori Iida, Akihiko Furukawa, Tetsuya Yamaguchi, Michio Sasaki, Hisanori Ihara, Hidetoshi Nozaki, Takaaki Kamimura
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Abstract
A photo-assisted CVD apparatus including a reaction chamber for storing a substrate, an inlet port for feeding a source gas into the reaction chamber, a light source for radiating light on the source gas fed into the reaction chamber to decompose the source gas upon radiating the light, thereby depositing a film on the substrate, an inlet port for supplying an etching gas into the reaction chamber, and a discharge electrode, arranged above the substrate and having a configuration, surrounding a space above the substrate, for exciting the etching gas.
Claims12
A photo-assisted CVD apparatus comprising:
- a reaction chamber for storing a substrate, said reaction chamber having a light-receiving window;
- means for feeding a source gas into said reaction chamber;
- means for radiating light through said light receiving window onto said source gas fed into said reaction chamber to decompose said source gas, thereby depositing a film on said substrate;
- means for supplying an etching gas into said reaction chamber;
- discharge electrode means, arranged between said light-receiving window and said substrate and having a single opening through which light is transmitted to said substrate, for exciting said etching gas;
- and
- means for feeding an inert gas into a space between said light receiving window and said discharge electrode means.
A photo-assisted CVD apparatus comprising:
- a reaction chamber for storing a substrate;
- means for feeding a source gas into said reaction chamber;
- means for radiating light onto said source gas fed into said reaction chamber to decompose said source gas, thereby depositing a film on said substrate;
- means for supplying an etching gas into said reaction chamber;
- first discharge electrode means, arranged between said light receiving window and said substrate and having a single opening through which light is transmitted to said substrate, for exciting said etching gas;
- and
- second discharge electrode means, movable between a first position above said substrate and said reaction chamber and a second position outside said reaction chamber, for exciting said etching gas.
A photo-assisted CVD apparatus comprising:
- a reaction chamber for storing a substrate, said reaction chamber having a light receiving window;
- means for feeding a source gas into said reaction chamber;
- means for radiating light through said light receiving window onto said source gas fed into said reaction chamber to decompose said source gas, thereby depositing a film on said substrate;
- means for supplying an etching gas into said reaction chamber;
- and
- discharge electrode means, arranged between said light receiving window and said substrate and having a single opening through which light is transmitted to said substrate, for exciting said etching gas, said discharge electrode means covering said light receiving window while in said first position.
A photo-assisted CVD method comprising the steps of:
- feeding a source gas into a reaction chamber in which a substrate is stored;
- radiating light into said reaction chamber through a light receiving window and a discharge electrode means having a single opening arranged above said substrate to decompose said source gas in said reaction chamber, thereby forming a thin film on said substrate by a chemical reaction;
- feeding an etching gas into said reaction chamber and feeding a gas inert to said etching gas into said reaction chamber to cause the inert gas to flow in a direction from said light receiving window to said substrate;
- and
- producing an etching species in said reaction chamber by a plasma discharge to etch a deposit in said reaction chamber.
Dependencies are inferred from the claim text.