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US 5,523,616 AGranted
Semiconductor device having laminated tight and coarse insulating layers
AssigneeNEC Corporation
InventorYasuhide Den
Life of this patent
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Abstract
In a semiconductor device having a passivation layer, the passivation layer includes a laminated configuration formed by a plurality of tight insulating layers and a plurality of coarse insulating layers alternating with the tight insulating layers.
Claims6
A semiconductor device comprising:
- a semiconductor substrate;
- an element formed above said semiconductor substrate;
- and
- a passivation layer formed on said element, said passivation layer including a laminated configuration formed by a plurality of tight insulating layers and a plurality of coarse insulating layers alternating with said tight insulating layers, said insulating layers being made of silicon nitride.
1 more element
A semiconductor device comprising:
- a semiconductor substrate;
- an element formed above said semiconductor substrate;
- and
- a passivation layer formed on said element, said passivation layer including a laminated configuration formed by a plurality of first insulating layers and a plurality of second insulating layers alternating with said first insulating layers, said first and second insulating layers being made of the silicon nitrite,
- a density of said first insulating layers being larger than density of said second insulating layers.
2 more elements
Dependencies are inferred from the claim text.