Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes
AssigneeBell Communications Research, Inc.
InventorRamamoorthy Ramesh
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Abstract
Ferroelectric capacitor heterostructures exhibiting exceptional reliability and resistance to fatigue and imprinting comprise hybrid electrodes of highly conductive platinum with polycrystalline metallic oxide and ferroelectric materials deposited on Si-CMOS-compatible substrates without the requirement for interposed crystallographic orientation templates.
Claims13
A ferroelectric capacitor heterostructure comprising a silicon substrate having a primed silicon compound surface and at least one crystalline ferroelectric material layer grown above said surface
- characterized in that a layer of metal grown on said surface provides electrical conductivity for said heterostructure and with a metallic oxide layer grown thereon forms a hybrid capacitor electrode substrate for said ferroelectric layer.
A method of preparing a ferroelectric capacitor heterostructure which comprises growing at least one crystalline ferroelectric material layer above a silicon substrate having a primed silicon compound surface layer
- characterized in that a layer of metal is grown on said surface layer to provide electrical conductivity for said heterostructure and a metallic oxide layer is grown on said metal to form therewith a hybrid capacitor electrode substrate for said ferroelectric layer.
Dependencies are inferred from the claim text.