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US 5,517,060 AGranted
Semiconductor device having improved backing conductive layers
AssigneeNEC Corporation
InventorMakoto Kobayashi
Life of this patent
Estimating the term…
Abstract
In a semiconductor device including at least two parallel conductive layers electrically isolated from each other and at least two parallel backing conductive layers opposing the two parallel conductive layers and electrically connected thereto via contact holes, a thickness of an insulating layer beneath one of the backing conductive layers is different from a thickness of an insulating layer beneath other adjacent backing conductive layers.
Claims13
A semiconductor device comprising:
- at least parallel first and second conductive layers electrically isolated from each other;
- an insulating layer formed on said first and second conductive layers;
- and
- at least parallel first and second backing conductive layers formed on said insulating layer, said first and second backing conductive layers opposing said first and second conductive layers, respectively, said first backing conductive layer being electrically connected to said first conductive layer via a first contact hole formed in said insulating layer, and said second backing conductive layer being electrically connected to said second conductive layer via a second contact hole formed in said insulating layer, wherein a first portion of said insulating layer sandwiched between said first backing conductive layer and said first conductive layer is thinner than a second portion of said insulating layer sandwiched between said second backing conductive layer and said second conductive layer.
1 more element
A semiconductor device comprising:
- at least parallel first and second conductive layers electrically isolated from each other;
- a first insulating layer formed on said first and second conductive layers;
- a first backing conductive layer formed on said first insulating layer, said first backing conductive layer opposing said first conductive layer and being electrically connected to said first conductive layer via a first contact hole formed in said first insulating layer;
- a second insulating layer formed on said first insulating layer and said first backing conductive layer;
- and
- a second backing conductive layer formed on said second insulating layer, said second backing conductive layer opposing said second conductive layer and being electrically connected to said second conductive layer via a second contact hole formed in said first and second insulating layers.
3 more elements
A semiconductor device comprising:
- 2N (N=1, 2, . . . ) conductive layers electrically isolated from each other;
- an insulating layer formed on said conductive layers;
- N parallel first backing conductive layers formed on said insulating layer, each of said first backing conductive layers opposing a 2i (i=1, 2, . . . , N/2)-th conductive layer of said conductive layers and being electrically connected to the 2i-th conductive layer via a contact hole formed in said insulating layer;
- and
- N parallel second backing conductive layers formed on said insulating layer, each of said second backing conductive layers opposing a (2i-1) (i=1, 2, . . . , N/2)-th conductive layer of said conductive layers and being electrically connected to the (2i-1)-th conductive layer via a contact hole formed in said insulating layer, wherein a first portion of said insulating layer sandwiched between said first backing conductive layers and said first conductive layer has a first thickness and a second portion of said insulating layer sandwiched between said second backing conductive layers and said second conductive layer has a second thickness different from said first thickness.
2 more elements
A semiconductor device comprising:
- 2N (N=1, 2, . . . ) conductive layers electrically isolated from each other;
- a first insulating layer formed on said conductive layers;
- N parallel first backing conductive layers formed on said first insulating layer, each of said first backing conductive layers opposing a 2i (i=1, 2, . . , N/2)-th conductive layer of said conductive layers and being electrically connected to the 2i-th conductive layer via a contact hole formed in said first insulating layer;
- a second insulating layer formed on said first insulating layer and said first backing conductive layers;
- and
- N parallel second backing conductive layers formed on said second insulating layer, each of said second backing conductive layers opposing a 2i-1 (i=1, 2, . . . , N/2)-th conductive layer of said conductive layers and being electrically connected to the (2i-1)-th conductive layer via a contact hole formed in said first and second insulating layers.
3 more elements
A semiconductor device comprising:
- 2N (N=1, 2, . . . ) conductive layers electrically isolated from each other;
- a first insulating layer formed on said conductive layers;
- N parallel first backing conductive layers formed on said first insulating layer, each of said first backing conductive layers opposing a 2i-1 (i=1, 2, . . . , N/2)-th conductive layer of said conductive layers and being electrically connected to the (2i-1)-th conductive layer via a contact hole formed in said first insulating layer;
- a second insulating layer formed on said first insulating layer and said first backing conductive layers;
- and
- N parallel second backing conductive layers formed on said second insulating layer, each of said second backing conductive layers opposing a 2i (i=1, 2, . . , N/2)-th conductive layer of said conductive layers and being electrically connected to the 2i-th conductive layer via a contact hole formed in said first and second insulating layers.
3 more elements
Dependencies are inferred from the claim text.