Input-output drive reduction in a semiconductor integrated circuit

An integrated circuit structure on a semiconductor substrate having a plurality of transistors, comprising:

• a semiconductor substrate having a face and a plurality of transistors therein;
• a first insulating layer over the face of said semiconductor substrate;
• a plurality of planar conductive structures over said first insulating layer;
• a second insulating layer over said plurality of planar conductive structures;
• and
• a plurality of input and output connection pads positioned over respective ones of said plurality of planar conductive structures;
• wherein said input connection pads are connected to input circuits of some of the plurality of transistors, said output connection pads are connected to output circuits of some of the plurality of transistors, and each of said plurality of planar conductive structures is connected to output circuits of some other of the plurality of transistors such that the voltage potential on each of said planar conductive structures substantially tracks the voltage potential on each of the respective said connection pads.

A method, in an integrated circuit structure on a semiconductor substrate having a plurality of transistors, comprising the steps of:

• depositing a first insulating layer over the face of the semiconductor substrate;
• depositing a plurality of planar conductive structures over the first insulting layer;
• connecting the plurality of planar conductive structures to output circuits of some other of the plurality of transistors;
• depositing a second insulating layer over the plurality of planar conductive structures;
• depositing a plurality of input and output connection pads positioned over respective ones of the plurality of planar conductive structures;
• and
• connecting the plurality of input and output connection pads to the input and output circuits of some of the plurality of transistors, respectively;
• wherein the voltage potential on each of the planar conductive structures substantially tracks the voltage potential on each of the respective connection pads.