US 5,517,041 A · Semiconductor device

Abstract

Four gate electrodes of an n-type basic cell of a gate array are essentially oriented in a circular tangential direction of a radius relative to the center point Q of a cell. The electrodes have an upper and lower and a right and left symmetrical layout arrangement relative to the cell upper and lower center line and left and right center line. As a consequence, adjacent gate electrodes are positioned in a .+-.90.degree. rotating symmetry. Each gate electrode has wiring connection areas on both ends. The wiring connection areas overlap the pre-rotation wiring connection areas by a .+-.90.degree. rotation of the cell. Because the gate electrodes are essentially oriented along the circumference direction, the source and the drain are separated in the radial direction of the center of the cell. The wiring connection areas are not concentrated at the center of the cell, and this improves the wiring capabilities within the cell. In addition, because each end of the gate electrodes has an equal positional relationship relative to the center of the cell, the gate electrodes may have wiring connection areas not only on one end, but on both ends. This improves the wiring capability of each gate. The p-type basic cell has the same structure as the n-type basic cell.

Claims18

Dependent claims

A semiconductor device that is characterized by forming the desired electronic circuits by having a plurality of arranged basic cells and by appropriately connecting the inside of the said basic cells and the interval between the said basic cells with wiring, each basic cell having a well of doped semiconductive material and a plurality of gate electrodes overlying the well, each gate electrode further having wiring connection areas, wherein the aforesaid basic cells have 4n (where n is a natural number) MIS transistors and the wiring connection areas of the said transistors have rotating symmetry that overlaps the same type of wiring connection areas of other transistors before rotation by means of a .+-.90.degree. rotational operation, and wherein the gate electrodes of the said transistors are essentially oriented along the circumferential direction relative to the center of the cell.

A semiconductor device with a plurality of arrayed first conductive basic cells and second conductive basic cells;

wherein wiring is used to make appropriate connections within the basic cells and between the basic cells to form the desired electronic circuit, each basic cell having a well of doped semiconductive material and a plurality of gate electrodes overlying the well, each gate electrode further having wiring connection areas, and the basic cells have 4n (where n is a natural number) MIS transistors and the wiring connection areas of the said transistors have rotating symmetry that overlaps the same type of wiring connection areas of other transistors before rotation by means of a .+-.90.degree. rotational operation;
wherein the gate electrodes of the transistors are essentially oriented along the circumferential direction relative to the center of the cell;
wherein the size of the aforesaid first conductive basic cells and second conductive basic cells are essentially the same, and wherein a matrix of n-rows and m-columns of the first conductive cells defines a first conductive block and wherein a matrix of n-rows and m-columns of the second conductive cells define a second conductive block;
and wherein the first conductive blocks and aforesaid second conductive blocks are arrayed from top and bottom and right and left.

1 more element

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims18