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US 5,516,717 AGranted
Method for manufacturing electrostatic discharge devices
AssigneeUnited Microelectronics Corp.
InventorChen-Chung Hsu
Life of this patent
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Abstract
A method for manufacturing electrostatic discharge (ESD) devices on a silicon substrate. The method is consistent with fabricating an integrated circuit having a buried contact structure. By modifying photolithographic masks, the ESD device and the buried contact are formed on the silicon substrate at the same time. Without any extra processing steps, the manufacturing of the ESD device is simplified thus reducing the manufacturing cost.
Claims9
A method for forming an electrostatic discharge device on a silicon substrate, comprising the steps of:
- forming a field oxide layer upon said silicon substrate to define a buried contact region, an electrostatic discharge region and a device region;
- forming a dielectric layer overlying said buried contact region, said electrostatic discharge region, and said device region;
- forming a first conducting layer overlying said dielectric layer;
- patterning and etching said first conducting layer and said dielectric layer to form a contact window in said buried contact region and to expose source/drain regions in said electrostatic discharge region;
- forming a second conducting layer overlying said buried contact region, said electrostatic discharge region, and said device region;
- implanting ions to increase the conductivity of said first and second conducting layers and to form diffusion regions in said silicon substrate under said source/drain regions and said contact window;
- forming a silicide layer overlying said second conducting layer;
- and
- patterning and etching said silicide layer and said first and second conducting layers to form gate electrodes in said electrostatic discharge region and said device region.
6 more elements
Dependencies are inferred from the claim text.