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AssigneeEastman Kodak Company
InventorsGilbert A. Hawkins, David L. Losee
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A fully self-aligned, charge coupled device (CCD) comprises a semiconductor substrate having implanted barrier and/or storage regions, an insulating dielectric layer disposed over the substrate, a first layer of closely spaced electrodes in self-alignment with at least one implant underneath the first electrodes, a second layer of closely spaced electrodes in self-alignment with the first electrodes and with at least one implant underneath the second electrodes also in self-alignment with the first electrodes. The process for fabricating the fully self-aligned CCD comprises the steps of first forming upon the semiconductive substrate, a uniform insulating dielectric layer; then forming a sacrificial layer upon the dielectric layer, the sacrificial layer patterned by removal of selected portions of the layer, at least one edge of the patterned sacrificial layer serving as a mask for ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming in only those regions in which the sacrificial layer was removed, a first gate electrode; then removing the sacrificial layer, thereby exposing the sidewalls of the closely spaced first gate electrode, at least one of the sidewalls serving as a mask for a second ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming a first oxide layer over the exposed surface of the first gate electrode; then depositing and patterning a second gate electrode layer to form a second gate electrode disposed between portions of the first gate electrode.
In a method of forming a CCD, the improvement comprising the steps of:
A method of fabricating, in a first conductivity type semiconductor substrate, a two phase charge coupled device with self-aligned dopant implanted strips in the semiconductor substrate and underlying at least a first set of gate electrodes and deposited prior to deposition of first or second gate electrode layers, comprising the steps of:
A method of accurately aligning strips of implanted dopant in a semiconductor substrate with conductive strips above the implant strips, comprising the steps of:
A method of accurately edge aligning multiple strips of implanted dopants in a substrate with conductive strips formed on the substrate, at least one edge of each implant strip being precisely aligned to at least one edge of the conductive strip, some of the multiple implants lying appreciably under the conductive strips and some of the multiple implants laterally extending away from the conductive strip, comprising the steps of:
In a method of forming a CCD, the improvement comprising the steps of:
Dependencies are inferred from the claim text.