Resist processing method
AssigneeTadahiro Ohmi
InventorsTadahiro Ohmi, Tohru Nonaka, Motonobu Horikoshi, Masanobu Onodera
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Abstract
The present invention relates to a resist processing device and resist processing method that enable resist pattern formation with a high degree of accuracy, and furthermore, enable in continuous dry etching, an isotropic etching possessing extremely high selectivity. The resist processing device is provided with at least a mechanism for the radiation of ultraviolet rays onto a substrate having a resist formed thereon, and a mechanism for the introduction of inert gas into the device. The resist processing method is characterized in that the radiation of ultraviolet rays onto a substrate which has a resist form thereon is conducted in an inert gas atmosphere.
Claims8
A resist processing method for forming a resist pattern, the method comprising the steps of 1) radiating ultraviolet rays onto a resist which is disposed on a substrate in an inert gas atmosphere after development of said resist, and 2) thereafter baking said resist at a temperature above 230.degree. C.
Dependencies are inferred from the claim text.