Highly integrated semiconductor device contact structure

A highly integrated semiconductor connecting device, comprising:

• a device separation insulating film, a source region and a drain region formed on portions of a semiconductor substrate;
• a second interlayer insulating film covering an etching barrier material atop a first interlayer material formed on said device separation insulating film and on said drain region, having a contact hole through which a first portion of said device separation insulating film is exposed along with a second portion of said drain region and so that a third portion of said drain region remains covered over by a fourth portion of said interlayer insulating film;
• a pair of spacer insulating films formed at both side walls of said contact hole;
• and
• a bit line formed on the exposed first portion of said device separation insulating film and on the exposed second portion of said drain region within the contact hole and such that a third portion of said drain region remains covered over by a fourth portion of said interlayer insulating film, the bit line within the contact hole being thinner on a drain region side than on a device separation insulating film side.