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AssigneeKabushiki Kaisha Toshiba
InventorsShinji Onga, Takako Okada, Kouichirou Inoue, Yoshiaki Matsushita, Kikuo Yamabe, Hiroaki Hazama, Haruo Okano
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A semiconductor device includes a monocrystalline silicon substrate, an insulating film consisting of a monocrystalline silicon oxide formed on the surface of the monocrystalline silicon substrate, and a conductive film formed on the insulating film. The monocrystalline silicon substrate has a (100) plane orientation, the insulating film essentially consists of .beta.-cristobalite having a unit structure in a P4.sub.1 2.sub.1 2 structural expression in such a manner that every other silicon atoms of four silicon atoms aligned about a C-axis are arranged on two adjacent silicon atoms aligned in a 110! direction on an Si (100) plane, and that a plane including the C-axis of the .beta.-cristobalite and the 110! direction is set perpendicular to the (100) plane.
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein crystal orientations of said monocrystalline silicon substrate and said insulating film are set such that a difference between an Si--Si distance of Si atoms in said monocrystalline silicon substrate and an Si--Si difference of Si atoms in said insulating film present at positions corresponding to the Si atoms in the substrate falls within a range of .+-.7%.
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein an oxygen defect concentration of said insulating film is not more than 0.01%.
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein said monocrystalline silicon oxide consists essentially of a cristobalite.
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein said monocrystalline silicon substrate has a plane orientation (110), and said insulating film essentially consists of monocrystalline quartz having a plane orientation falling within a range of +6.degree. from a (1,-1,0,1) plane.
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film., wherein said monocrystalline silicon substrate has a plane orientation (100), and said insulating film consists essentially of monocrystalline quartz having a plane orientation falling within a range of .+-.6.degree. from a (1,-1,0,1) plane.
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein said monocrystalline silicon substrate has a (100) plane orientation, said insulating film essentially consists of .beta.-cristobalite having a unit structure in a P4.sub.1 2.sub.1 2 structural expression in such a manner that every other silicon atom of four silicon atoms aligned about a C-axis are arranged on two adjacent silicon atoms aligned in a 110! direction on an Si (100) plane, and that a plane including the C-axis of said .beta.-cristobalite and the 110! direction is perpendicular to the (100) plane.
A semiconductor device comprising a monocrystalline silicon substrate, an insulating film consisting essentially of a monocrystalline silicon oxide formed on a surface of said monocrystalline silicon substrate, and a conductive film formed on said insulating film, wherein said monocrystalline silicon substrate has a plane orientation (100), and said insulating film consists essentially of monocrystalline quartz having a plane orientation falling within a range of .+-.6.degree. from a (1,0,-1,0) plane.
Dependencies are inferred from the claim text.