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US 5,514,891 AGranted
N-type HIGFET and method
AssigneeMotorola, Inc.
InventorsJonathan K. Abrokwah, Rodolfo Lucero, Jeffrey A. Rollman
Life of this patent
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Abstract
An N-type HIGFET (10) utilizes two etch layers (17,18) to form a gate insulator (16) to be shorter that the gate electrode (21). This T-shaped gate structure facilitates forming source (23) and drain (24) regions that are separated from the gate insulator (16) by a distance (22) in order to reduce leakage current and increase the breakdown voltage.
Claims8
A HIGFET comprising:
- a III-V substrate having a channel layer;
- a T-shaped gate structure having a cross-member supported by a base, the base having an insulator on the substrate, a first etch stop layer on the insulator, a second etch stop layer on the first etch stop layer, and a doped gallium arsenide layer on the second etch stop layer wherein the base has a width that is less than a width of the cross-member;
- and
- a doped region in the substrate wherein an edge of the doped region is a first distance from an edge of the insulator.
1 more element
Dependencies are inferred from the claim text.