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US 5,514,612 AGranted
Method of making a semiconductor device with integrated RC network and schottky diode
AssigneeCalifornia Micro Devices Corporation
InventorsBhasker Rao, Horst Leuschner, Ashok Chalaka
Life of this patent
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Abstract
A semiconductor device which has a resistor, a capacitor, a Schottky diode, and an ESD protection device all formed on a single semiconductor substrate. The resistor and the capacitor are coupled together in series. The Schottky diode and the ESD protection device are coupled in parallel to the series connection of the resistor and capacitor.
Claims30
A method of fabricating an integrated semiconductor device comprising the steps of:
- utilizing a substrate;
- forming a first doped region in said substrate so as to define a first plate of a capacitor;
- forming a dielectric region above said first doped region so as to define a dielectric portion of said capacitor;
- forming a first conductive region above said dielectric region so as to define a second plate of said capacitor;
- forming a resistive region defining a resistor;
- forming a second conductive region having a first portion above and in contact with said first conductive region and a second portion in contact with said resistive region so as to define a first terminal of said resistor and couple said first terminal of said resistor to said second plate of said capacitor;
- and
- forming a third conductive region in contact with said resistive region so as to define a second terminal of said resistor.
5 more elements
A method of fabricating an integrated semiconductor device comprising the steps of:
- providing a substrate;
- forming a first doped region in said substrate so as to define a first plate of a capacitor;
- forming a dielectric region above said first doped region so as to define a dielectric portion of said capacitor;
- forming a first conductive region above said dielectric region so as to define a second plate of said capacitor;
- forming a resistive region defining a resistor;
- forming a second conductive region having a first portion above and in contact with said first conductive region and a second portion in contact with said resistive region so as to define a first terminal of said resistor and couple said first terminal of said resistor to said second plate of said capacitor;
- forming a doped well in said substrate;
- forming a second doped region in said doped well so as to define a cathode of a Schottky diode;
- forming a third conductive region in contact with said resistive region so as to define a second terminal of said resistor and a second portion in contact with said second doped region so as to couple said second terminal of said resistor to said cathode of said Schottky diode;
- and
- forming a fourth conductive region in contact with said doped well so as to define an anode of said Schottky diode.
8 more elements
Dependencies are inferred from the claim text.