Apparatus for simultaneous plating
AssigneeSamsung Electronics Co., Ltd.
InventorO. Gweon Seo
Life of this patent
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Abstract
The present invention relates to an apparatus for simultaneous plating with which arc ion plating and hollow cathode discharge (HCD) ion plating can be concurrently carried out in one chamber, and sputtering plating can also be performed in the other chamber while the former two types of platings are being performed. Since only one type of plating can be performed in one chamber with a conventional apparatus, there have been problems such as excessive installation cost and inferior plating quality. According to the present invention, simultaneous arc ion plating and HCD ion plating in one chamber and sputtering plating in the other one is possible, which may lower the installation cost and improve the plating quality.
Claims2
An apparatus for simultaneous plating comprising;
- a first chamber in which arc ion plating and HCD ion plating may be concurrently or selectively performed;
- a second chamber in which a sputtering plating may be performed;
- a vacuum pump which is connected to said first and second chambers;
- and
- two throttle valves each of which is connected to one of said two chambers.
Dependencies are inferred from the claim text.