Semiconducter device having an emitter terminal separated from a base terminal by a composite nitride/oxide layer

A semiconductor device comprising:

• a pad oxide layer disposed on a semiconductor substrate;
• a conducting layer disposed on said pad oxide layer;
• an insulating layer disposed on said conducting layer wherein said insulating layer has a first opening, said conducting layer has a second opening, and said pad oxide layer has a third opening, wherein said first, second, and third openings are substantially coextensive and define an aperture that extends from said insulating layer to said semiconductor substrate;
• a conductive plug disposed in said aperture and in contact with both said conducting layer and a first diffusion region in said semiconductor substrate;
• an oxide layer disposed in said aperture and on said conductive plug wherein said oxide layer is also in contact with said semiconductor substrate;
• a nitride layer disposed on said oxide layer;
• and
• a first conductive terminal substantially disposed in said aperture and in contact with a second diffusion region in said semiconductor substrate wherein said oxide layer and said nitride layer are disposed between said first conductive terminal and said conductive plug.