Back to results
US 5,512,334 AGranted
Method for the production of a bottom resist
AssigneeSiemens Aktiengesellschaft
InventorsRainer Leuschner, Recai Sezi, Michael Sebald
Life of this patent
Estimating the term…
Abstract
A method for producing a bottom resist for a two-layer O.sub.2 /Reactive Ion Etching system which fulfills all the requirements set for such a resist. A varnish layer of a base polymer containing an aromatic, a cross-linking agent and an acid-forming agent is applied to a substrate. The varnish layer is flood-exposed to release a strong acid from the acid-forming agent in the surface region of the layer. This is followed by thermal curing.
Claims14
A method for the production of a resist structure by means of a two-layer O.sub.2 /Reactive Ion Etching system, comprising the steps of:
- applying a varnish layer of a base polymer containing an aromatic group, a cross-linking agent and a strong acid-forming agent to a substrate;
- flood-exposing the varnish layer with deep UV light so as to release a strong acid from the strong acid-forming agent in a surface region of the layer;
- thermally curing the layer at a temperature of greater than 100.degree. C. to obtain a bottom resist;
- applying a silicon-containing or silylizable top resist to the bottom resist;
- exposing the top resist with deep UV light or near UV light using a mask and developing the top resist to obtain a pattern;
- and transferring the pattern from the top resist into the bottom resist by using a reactive ion etching oxygen plasma.
3 more elements
Dependencies are inferred from the claim text.