Etching method for indium series compound semiconductors
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorShinichi Miyakuni
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Abstract
An etching method for an In series compound semiconductor includes etching in a plasma etching of a flowing mixture of a halogen and nitrogen, the flow ratio of halogen to nitrogen being lower than 1, and at a gas pressure below 0.5 mTorr. An etching method for an In series compound semiconductor includes etching in a plasma etching apparatus and a mixture of halogen/inactive gas/nitrogen gas, the flow rate ratio of halogen/(halogen+inactive gas+nitrogen gas) being lower than 0.1, the flow rate ratio of nitrogen/(halogen+inactive gas+nitrogen gas) being above 0.1, and the gas pressure being below 0.5 mTorr. Etching at low ion energy produces good surface morphology, a vertical side surface configuration having an etched concave portion, and low damage.
Claims8
A method for etching an In compound semiconductor comprising etching a compound semiconductor including In in a plasma in a flowing mixture of a halogen and nitrogen in which the halogen flows at a lower rate than the nitrogen and gas pressure is below 0.5 mTorr.
A method for etching an In compound semiconductor comprising etching a compound semiconductor including In in a plasma in a flowing mixture of a halogen, an inactive .gas, and nitrogen in which halogen flow to (halogen+inactive gas+nitrogen gas) flow is lower than 0.1, nitrogen flow to (halogen+inactive gas+nitrogen gas) flow is above 0.1, and gas pressure is below 0.5 mTorr.
A method for etching an In compound semiconductor comprising etching a compound semiconductor including In in an electron cyclotron resonance plasma in a flowing mixture of chlorine and nitrogen in which chlorine flow to nitrogen flow is below 1, total gas flow is about 10 SCCM, gas pressure is below 0.5 mTorr, and the compound semiconductor substrate temperature is 100.degree.-200.degree. C.
A method for etching an In compound semiconductor comprising etching a compound semiconductor including In in an electron cyclotron resonance plasma in a flowing mixture of a halogen, an inactive gas, and nitrogen in which halogen flow to (halogen+inactive gas+nitrogen gas) flow is lower than 0.1, nitrogen flow to (halogen+inactive gas+nitrogen gas) flow is above 0.1, gas pressure is below 0.5 mTorr, total gas flow rate is about 10 SCCM, and the compound semiconductor substrate temperature is 100.degree.-200.degree. C.
Dependencies are inferred from the claim text.