Film forming apparatus

A sputtering apparatus comprising:

• a) means for forming a metal silicide thin film containing a transition metal selected from the group consisting of Mo, Ti, W, Ta, V, Nb and Hf, said forming means including:
• 1) a vacuum vessel;
• 2) a film forming substrate arranged within said vacuum vessel;
• 3) a target arranged within said vacuum vessel to face said film forming substrate, said target comprising a Si component and at least one transition metal component selected from the group consisting of Mo, Ti, W, Ta, V, Nb and Hf;
• and
• 4) support/shield structures arranged within said vacuum vessel for supporting said substrate and target and for shielding said substrate;
• and
• b) means for preventing emission from said support/shield structures of metal silicide particles deposited on said support/shield structures during operation of said sputtering apparatus, said preventing means including the surface of said support/shield structures coated with at least one metal selected from the group consisting of Mo, Ti, W, Ta, V, Nb and Hf, such that the difference in the thermal expansion coefficient between said metal silicide thin film and said support/shield structures is within the range of .+-.7.5.times.10.sup.-6 /.degree.C.

A sputtering apparatus comprising:

• 1) means for forming a metal silicide thin film, including:
• 1) a vacuum vessel;
• 2) a film forming substrate held by a substrate holder within said vacuum vessel;
• 3) a target arranged within said vacuum vessel to face said film forming substrate, said target being placed on a backing plate, said target comprising a Si component and at least one transition metal component selected from the group consisting of Mo, Ti, W, Ta, V, Nb and Hf;
• and
• 4) a deposition preventing board for preventing the deposition of sputtered material from said target on the inner walls of said vacuum vessel;
• and
• b) means for preventing emission from said deposition preventing board of metal silicide particles deposited on said deposition preventing board during operation of said sputtering apparatus, said preventing means including the surface of said deposition preventing board coated with at least one metal selected from the group consisting of Mo, Ti, W, Ta, V, Nb and Hf, such that the difference in the thermal expansion coefficient between said metal silicide thin film and said deposition preventing board is within the range of .+-.7.5.times.10.sup.-6 /.degree.C.