Semiconductor device including silicon ladder resin layer

A semiconductor device comprising:

• a semiconductor substrate having p-type and n-type major surfaces;
• a p-channel transistor being provided on said p-type major surface;
• a n-channel transistor being provided on said n-type major surface;
• a first interconnection layer being provided over said semiconductor substrate for connecting said p-channel and n-channel transistors with each other;
• an interlayer insulating film being provided on said first interconnection layer;
• a film of silicon ladder resin being applied on said interlayer insulating film, said silicon ladder resin being expressed in the following general formula:
• ##STR7## wherein each R.sub.1 is individually selected from the group consisting of phenyl radicals and lower alkyl radicals, and each R.sub.2 is individually selected from the group consisting of hydrogen atoms and lower alkyl radicals;
• via holes being provided through said silicon ladder resin film and said interlayer insulating film;
• and
• a second interconnection layer being provided on said silicon ladder resin layer and connected with said first interconnection layer through said via holes.

A semiconductor device comprising:

• a semiconductor substrate;
• a first interconnection layer being provided on said semiconductor substrate;
• an interlayer insulating film being provided on said first interconnection layer;
• a film of silicon ladder resin being applied on said interlayer insulating film and not in contact with the first interconnection layer, said silicon ladder resin being expressed in the following general formula:
• ##STR8## wherein each R.sub.1 is individually selected from the group consisting of phenyl radicals and lower alkyl radicals, and each R.sub.2 is individually selected from the group consisting of hydrogen atoms and lower alkyl radicals;
• and
• a second interconnection layer provided on said silicon ladder resin layer.