Metal-to-metal antifuse with improved diffusion barrier layer
AssigneeActel Corporation
InventorsAbdul R. Forouhi, Iton Wang
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Abstract
A metal-to-metal antifuse comprises a lower electrode comprising a first metal layer in an integrated circuit, a first barrier layer formed from a layer of TiW:N disposed over the lower electrode, a layer of antifuse material formed from amorphous silicon over the first barrier layer, a second barrier layer formed from a layer of TiW:N disposed over the layer of antifuse material, said second barrier layer, and an upper electrode over the second barrier layer, the upper electrode comprising a second metal layer in the integrated circuit.
Claims2
A metal-to-metal antifuse comprising;
- a lower electrode comprising a portion of a first metal interconnect layer in an integrated circuit;
- a first barrier layer disposed over said lower electrode, said first barrier layer formed from a layer of TiW:N;
- a layer of antifuse material disposed over said first barrier layer, said layer of antifuse material formed from amorphous silicon;
- a second barrier layer disposed over said layer of antifuse material, said second barrier layer formed from a layer of TiW:N;
- said first and second barrier layers acting to limit a leakage current in said antifuse to a value less than about 1.times.10.sup.-8 A/.mu.m.sup.2 at 5 volts:
- and
- an upper electrode disposed over said second barrier layer, said upper electrode comprising a portion of a second metal layer in said integrated circuit.
An antifuse structure comprising first and second electrodes separated by a layer of antifuse material, at least one of said first and second electrodes comprising a metal layer, said antifuse further including as barrier layer comprising a layer of TiW:N, said barrier layer disposed between said layer of antifuse material and the one of said first and second electrodes which comprises a metal layer, said. barrier layer acting to limit a leakage current in said antifuse to a value less than about, 1.times.10.sup.-8 A/.mu.m at 5 volts.
Dependencies are inferred from the claim text.