Master-slice type semiconductor device
AssigneeKawasaki Steel Corporation
InventorMasaomi Murata
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Abstract
A master-slice type semiconductor device according to the present invention comprises a cell array on a main surface thereof, the cell array is constituted into a shape of matrix by adjoining channel regions each other, and the channel region has one of a P-channel type and a N-channel type. The cell array is constituted by a plurality of column patterns, and the channel region constituting a first column pattern is the same channel type as the adjoining channel region constituting a second column pattern. As a feature of the structure, the column pattern comprises a basic all including a P-channel region and two N-channel regions which are the same in figure and size.
Claims10
A master-slice-type semiconductor device comprising a cell array on a main surface of the semiconductor device, the cell array arranged in a matrix of basic cells adjoining each other, each of the basic cells comprising only one P-channel region and two N-channel regions, the two N-channel regions having a same size and shape, wherein only one P-type active layer is formed in the only one P-channel region and two separated N-type active layers are formed in each of the two N-channel regions.
A master-slice-type semiconductor device comprising a cell array on a main surface of the device, said cell array formed into a matrix having channel regions adjoining each other, each of said channel regions having one of a first conductivity type and a second conductivity type, said master-slice-type semiconductor device comprising:
- said cell array formed of a plurality of adjoining columns of channel regions, each row of the adjoining channel regions having a same channel type;
- and
- said column having a plurality of basic cells of said channel regions, each of said basic cells of channel regions including:
- a first region having only one channel region of the first conductivity type, wherein only one active layer is formed in the first region;
- a second region adjoining said first region and having two channel regions of the second conductivity type, the two channel regions having a same size,
- wherein two separated active layers are formed in each of the two channel regions and only one first region is between the second region and a second region of an adjacent basic cell.
Dependencies are inferred from the claim text.