Transversal bipolar transistor integrated with another transistor commonly provided on a semiconductor substrate

A semiconductor device, comprising:

• a vertical bipolar transistor and a transversal bipolar transistor provided on a semiconductor substrate of one conductivity type, and separated from each other by a device separating region provided thereon;
• said vertical bipolar transistor, comprising:
• a single crystal semiconductor region of an opposite conductivity type to said one conductivity type provided on said semiconductor substrate;
• a collector region of said opposite conductivity type provided in said single crystal semiconductor region;
• a base region of said one conductivity type being a single crystal semiconductor film provided on said single crystal semiconductor region;
• an emitter region of said opposite conductivity type provided in said single crystal semiconductor film;
• an aperture provided through an interfacial insulating film to expose said single crystal semiconductor region, said interfacial insulating film being provided on said single crystal semiconductor region;
• a first polycrystal semiconductor film of said one conductivity type provided on said interfacial insulating film to be connected via said aperture to said base region;
• a side wall insulating film having inner and outer walls and contacting with a side wall of said first polycrystal semiconductor film at said outer wall and crossing a PN junction of said emitter and base regions in said aperture;
• and
• a second polycrystal semiconductor film of said one conductivity type provided in an interior defined by said inner wall of said side wall insulating film to contact with said emitter region;
• and
• said transversal bipolar transistor comprising:
• a single crystal semiconductor region of said opposite conductivity type provided on said semiconductor substrate;
• a base region of said opposite conductivity being of a central portion of a single crystal semiconductor film provided on said single crystal semiconductor region of said transversal bipolar transistor;
• an emitter region of said one conductivity type being of one side portion of said single crystal semiconductor film of said transversal bipolar transistor;
• a collector region of said one conductivity type being of an opposite side portion to said one side portion of said single crystal semiconductor film of said transversal bipolar transistor;
• an aperture provided through said interfacial insulating film to expose said single crystal semiconductor region of said transversal bipolar transistor, said interfacial insulating film of said transversal bipolar transistor being also provided on said single crystal semiconductor region of said transversal bipolar transistor;
• a third polycrystal semiconductor film of said one conductivity type provided on said interfacial insulating film of said transversal bipolar transistor to be connected via said aperture of said transversal bipolar transistor to said emitter region of said transversal bipolar transistor;
• a fourth polycrystal semiconductor film of said one conductivity type provided on said interfacial insulating film of said transversal bipolar transistor to be connected via said aperture of said transversal bipolar transistor to said collector region of said transversal bipolar transistor;
• a side wall insulating film having inner and outer walls to contact with side walls of said third and fourth polycrystal semiconductor films at said outer wall and cross PN junctions of said base region of said transversal bipolar transistor relative to said emitter and collector regions of said transversal bipolar transistor;
• and
• a fifth polycrystal semiconductor film of said conductivity type provided in an interior defined by said inner wall of said side wall insulating film of said transversal bipolar transistor to contact with said base region of said transversal bipolar transistor;
• said base region of said transversal bipolar transistor, comprising:
• a base contact region of said opposite conductivity type on an intrinsic base region of said opposite conductivity type, said intrinsic base region and base contact region being disposed between said collector region and said emitter region.