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US 5,508,227 AGranted
Plasma ion implantation hydrogenation process utilizing voltage pulse applied to substrate
AssigneeNortheastern University
InventorsChung Chan, Shu Qin
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Abstract
A method of hydrogenating a thin film semiconductor wafer and an apparatus for performing the method. In one embodiment the method comprises the steps applying a pulsed potential having a predetermined amplitude, a predetermined repetition rate and a predetermined pulse duration to the thin film semiconductor wafer while exposing the thin film semiconductor wafer to a hydrogen plasma. The method is especially applicable to the formation of thin film transistors in flat display panels.
Claims11
A method of hydrogenating a TFT wafer comprising the steps of:
- placing a TFT wafer in a vacuum chamber;
- permitting a volume of hydrogen gas to enter said vacuum chamber to a pressure;
- ionizing at least a portion of said volume of hydrogen gas to form a hydrogen ion plasma;
- confining said hydrogen ion plasma at a substantially uniform density to a region adjacent said TFT wafer;
- applying a negative pulse potential to said TFT wafer, said pulse potential having a constant amplitude, a repetition rate and a pulse duration;
- and
- exposing said TFT wafer with said pulsed potential to said hydrogen ion plasma for an amount of time.
4 more elements
Dependencies are inferred from the claim text.