Photo mask

A photo mask used to form a positive photoresist film pattern at a region defined adjacent to a depression formed on a layer to be patterned, comprising:

• a quartz substrate;
• a chromium pattern formed on the quartz substrate;
• and
• a plurality of dot patterns formed on the quartz substrate and disposed adjacent to a portion of the chromium pattern overlapping with the depression of the layer to be patterned, the dot patterns being adapted to reduce an intensity of a light incident on a portion of the quartz substrate overlapping with the depression of the layer to be patterned.

A photo mask used to form a positive photoresist film pattern at a region defined adjacent to a depression formed on a layer to be patterned, comprising:

• a quartz substrate;
• a chromium pattern formed on the quartz substrate;
• and
• a non-transparent film pattern formed on the quartz substrate and adapted to shield a light incident on a portion of the photo mask disposed adjacent to a portion of the chromium pattern overlapping with the depression of the layer to be patterned.

A photo mask used to form a positive photoresist film pattern at a region defined adjacent to a depression formed on a layer to be patterned, comprising:

• a quartz substrate;
• a chromium pattern formed on the quartz substrate;
• and
• a pattern formed on the quartz substrate and adapted to reduce an intensity of a light incident through the photo mask on a predetermined portion of a light exposure region defined at one side portion of the chromium pattern disposed adjacent to a region where the depression is disposed.

A photo mask used to form a positive photoresist film pattern at a region defined adjacent to a depression formed on a layer to be patterned, comprising:

• a quartz substrate;
• a chromium pattern formed on the quartz substrate;
• and
• a plurality of dot patterns formed on the quartz substrate and disposed adjacent to a portion of the chromium pattern overlapping with the depression of the layer to be patterned, the dot patterns being adapted to reduce an intensity of a light incident on a portion of the quartz substrate overlapping with the depression of the layer to be patterned, and each of the dot patterns having a dimension capable of preventing the formation of a pattern in a photoresist film even when the photoresist film is exposed to light transmitted through the photo mask.